IISc Breakthrough Boosts Power Efficiency For Home Appliances
Researchers at the Indian Institute of Science (IISc) have developed a next‑generation semiconductor technology capable of drastically reducing power leakage, a breakthrough with implications for urban energy efficiency, electric mobility, and even household appliances. The team’s innovation in gallium nitride (GaN) power transistors reportedly cuts leakage currents by up to 10,000 times compared with conventional designs, potentially transforming energy consumption in devices ranging from EV chargers to kitchen and home appliances.
GaN devices are increasingly replacing traditional silicon switches in power electronics. Small leakage paths in conventional devices result in unnecessary energy loss, particularly in appliances like refrigerators, air conditioners, washing machines and microwave ovens, which operate continuously or cyclically in homes. By redesigning the gate architecture with advanced metal‑oxide stacks, the IISc team has created transistors that minimise these losses while maintaining thermal stability, offering both energy savings and improved device longevity for consumers.The breakthrough comes at a pivotal moment for India’s urban energy landscape, where growing household electrification and rising appliance penetration drive increased residential power demand. For densely populated cities, even marginal improvements in device efficiency can translate into significant reductions in electricity consumption, operational costs, and urban peak load. Appliances equipped with ultra‑low leakage power electronics could become more reliable and energy‑efficient, supporting both sustainability goals and household budgets.
Beyond residential applications, these transistors also benefit EV chargers, renewable energy inverters and data centre infrastructure, bridging the gap between industrial and consumer energy efficiency. By reducing leakage and improving conversion efficiency, IISc’s innovation aligns with broader urban sustainability objectives — lowering energy waste while enabling more compact, high-performance electronic devices. Industry analysts note that the challenge will be scaling and integrating these advanced GaN devices into commercial appliance circuits. Partnerships with Indian appliance manufacturers could accelerate adoption, making homes more energy-resilient and environmentally conscious. In a country where residential energy use accounts for a growing share of urban electricity demand, such innovations can help households and cities meet efficiency and sustainability targets.
By merging semiconductor innovation with everyday appliances, IISc’s work demonstrates how advanced technology can have tangible, home‑level impacts, contributing to India’s vision of climate-smart, energy-efficient urban living. From reducing monthly electricity bills to lowering carbon footprints, these power devices could reshape both household energy habits and citywide consumption patterns.
